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Loshkarev, Ivan
A.V. Rzhanov Institute of Semiconductor Physics of SB RAS
http://www.isp.nsc.ru/
Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone: +7(383) 333-27-66, Fax: +7(383) 333-27-71
Report
Kolesnikov A.
*
,
Труханов Е.М.
*
,
Loshkarev I.
*
,
Ильин А.С.
*
Tilt boundaries formation in vicinal (001) heterosystem GeSi/Si and GaAs/Si.
*
A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
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