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Tyes, Sergei
A.V. Rzhanov Institute of Semiconductor Physics of SB RAS
http://www.isp.nsc.ru/
Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone: +7(383) 333-27-66, Fax: +7(383) 333-27-71
Report
Nikiforov A.
*
,
Tomofeev V.A.
*
,
Tyes S.
*
,
Pchelyakov O.P.
*
Surface structure of thin pseudomorphological GeSi films
*
A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
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