Zakrevskiy, Dmitriy Eduardovich


A.V. Rzhanov Institute of Semiconductor Physics of SB RAS
http://www.isp.nsc.ru/
Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone: +7(383) 333-27-66, Fax: +7(383) 333-27-71

Reports list

  1. Schweigert I.V.*, Alexandrov A.L.*, Gugin P.P.**, Lavrukhin M.A.**, Bokhan P.A.**, Zakrevskiy D.E.**
    Effect of secondary electron emission on subnanosecond break-down in high-voltage pulse discharge
    * Институт теоретической и прикладной механики им. С.А. Христиановича СО РАН (Novosibirsk), Russia
    **A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
  2. Bokhan P.A.*, Gugin P.P.*, Zakrevskiy D.E.*, Lavrukhin M.A.*, Alexandrov A.L.**, Schweigert I.V.**
    High-voltage planar open discharge with counter electron beam generation
    *A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
    ** Институт теоретической и прикладной механики им. С.А. Христиановича СО РАН (Novosibirsk), Russia
  3. Bokhan P.A.*, Gugin P.P.*, Zakrevskiy D.E.*, Lavrukhin M.A.*
    High-voltage subnanosecond sharpener based on the combination of open and capillary discharges
    *A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
  4. Alexandrov A.L.*, Schweigert I.V.*, Gugin P.P.**, Lavrukhin M.A.**, Bokhan P.A.**, Zakrevskiy D.E.**
    Modelling of plasma afterglow in the ultra-fast high-voltage switch based on subnanosecond breakdown phenomenon
    * Институт теоретической и прикладной механики им. С.А. Христиановича СО РАН (Novosibirsk), Russia
    **A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia

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