Ignatov, Danil Yurievich
PhD studentHigh Current Electronics Institute of SB RAS
http://www.hcei.tsc.ru
Russia, 634055, Tomsk, pr. Academicheskii, 4
Phone: +7(382-2) 49-15-44, Fax: +7(382-2) 49-24-10
Report
- Lopatin I.V.*, Akhmadeev Y.H.*, Petrikova E.A.*, Krysina O.V.*, Ignatov D.Y.*
The system for ion-beam surface treating based on non-self-sustained glow discharge with hollow cathode
*High Current Electronics Institute of SB RAS (Tomsk), Russia