Baksht, Evgenii Khaimovich

Senior Research Scientist, Ph.D. in Technical Science

High Current Electronics Institute of SB RAS
http://www.hcei.tsc.ru
Russia, 634055, Tomsk, pr. Academicheskii, 4
Phone: +7(382-2) 49-15-44, Fax: +7(382-2) 49-24-10

Reports list

  1. Panarin V.A.*, Baksht E.K.*, Pechenitcin D.S.*, Skakun V.S.*, Sosnin E.A.*, Tarasenko V.F.*, Kuznetcov V.S.*
    ApoKamp is the phenomenon of the formation of the plasma jet from the bend of a channel pulse-periodic discharge
    *High Current Electronics Institute of SB RAS (Tomsk), Russia
  2. Tarasenko V.F.*, Burachenko A.G.*, Baksht E.K.*
    Luminescence of polymethylmethacrylate excited by a runaway electron beam from gas diode
    *High Current Electronics Institute of SB RAS (Tomsk), Russia
  3. Tarasenko V.F.*, Baksht E.K.*, Lomaev M.I.*
    Runaway electrons and ionization waves during breakdown the high pressure gases in non-uniform field
    *High Current Electronics Institute of SB RAS (Tomsk), Russia
  4. Baksht E.K.*, Belomyttsev S.*, Burachenko A.G.*, Grishkov A.*, Shklyaev V.A.*
    Stability of runaway electron beam formation in nitrogen at 100 Torr
    *High Current Electronics Institute of SB RAS (Tomsk), Russia

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